Chinese translation for "plasma ion"

等离子区离子

Related Translations:

plasmas:  等离子体

trapped plasma:  分离的血浆

sustained plasma:  等幅波辐射

plasma damage:  等离子体损伤

solar plasma:  太阳等离子体

plasma osmolarity:  血浆渗透量

plasma perfusion:  血浆灌流

magnetoactive plasma:  磁活化等离子体

plasma spray:  等离子弧喷涂等离子喷涂等离子体喷涂

surface plasma:  表面等离子体

Example Sentences:

	1.	Plasma ion oscillation 等离子体离子振荡
	2.	Research on deposition diamond - like carbon films with end - hall plasma ion source 端部霍尔等离子体源沉积类金刚石膜的研究
	3.	Some theoretical results and experimental technique in this paper is innovative to the development of rf ion source , moreover , it may be use for reference to the research of other plasma ion sources 同时，本文的研究工作对于其他类型的等离子体离子源(比如小型密封中子发生器离子源)的研究也有重要的参考作用。
	4.	Among of them , radio - frequency ion source is in most wide used for the reasons of its high proton content , long life and reliable performance , etc . h - type radio - frequency ion source is a kind of plasma ion source 其中，高频离子源以其很高的质子比( 70 - 90 ) 、长寿命和可靠的性能而得到了最广泛的应用。高频h型放电离子源属于等离子体离子源。
	5.	In the present work , water plasma ion implantation , instead of the conventional oxygen plasma ion implantation , has been employed to fabricate soi materials . the masses of the three dominant ion species in the water vapor plasma , h2o + , ho + , and o + , are very close to each other , which overcome the problem of co - existence of o and 02 in oxygen plasma source . the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much , which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose 本论文创造性地采用水等离子体离子注入方式代替传统的氧离子注入方式来制备soi结构材料，由于水等离子体中的三种离子h _ 2o ~ + 、 ho ~ +和o ~ +质量数相差很小，克服了氧等离子体中因o _ 2 ~ +和o ~ +质量数相差大而引起的氧在硅中的分布弥散，使注入硅后的氧射程分布相对集中，比较容易退火后形成soi结构材料。
	6.	This paper mainly discusses the performance specification of plasma source ( gis ) , technology and quality of tio2 and sio2 coatings and the technology for large antireflection coatings deposited with plasma - iad . the research shows that the index of optical coating increases remarkably by using plasma ion assisted deposition and approach to the massive material further , the coating structure is more compacted than the one obtained through conventional deposition method and the adhesive power is high as well 研究了用于辅助镀膜的等离子体源( gis )的结构原理及性能指标，并从光学特性、显微特性和机械特性三方面着手，研究了使用等离子体源所做的单层tio _ 2膜和单层sio _ 2膜的成膜工艺与质量。
	7.	The soi is of crystal quality and the box is uniform in thickness , with the interfaces of si / sioa / si smooth and sharp . we have systematically studied the dependence of the formed soi structure on the process parameters , such as ion energy , implantation dosage , substrate temperature , as well as the annealing temperature . with xtem , sims , srp , rbs , ir , raman , aes , xps and other characterization tools , it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists 本论文还系统地研究了不同注入剂量、注入能量、注入时基底温度以及退火温度对所形成soi结构性能的影响，借助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等测试分析手段，我们发现，与传统注氧隔离( simox )技术类似，存在着“剂量窗口”形成优质的soi材料，但在水等离子体离子注入方式中soi材料结构质量对剂量变化更为敏感，随着注入剂量的增大， soi材料的埋层厚度增大而表层硅厚度减小。
	8.	In the current experimental parameter range , thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained . compared to the conventional simox - soi , the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers 本论文一个重要发现是以水等离子体离子注入方式所形成埋层sio _ 2厚度得到了大幅度的展宽，相比传统simox法，其展宽幅度高达50 ，这一重要发现为降低注入时间和soi制备成本提供了有效的途径。
	9.	An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions . thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6 . 5 + 017cm - 2 and , subsequently , the high temperature annealing 我们使用无质量分析器的离子注入机，模拟等离子体离子注入过程，成功地在该注入机上用水等离子体离子注入制备出了界面陡峭、平整，表层硅单晶质量好，埋层厚度均匀的薄型soi材料。

Similar Words：

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